Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 36(5); 2003
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2003;36(5):418-422. Published online: Nov, 30, -0001

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High Density Planar Inductively Coupled Plasma Etching of GaAs in BCl$_3$-based Chemistries

  • ;;;;;;S.J. Pearton;
    ;;;;;;Department of Materials Sci. and Eng., University of Florida;
Abstract

평판형 유도결합 플라즈마 식각장비(inductively coupled plasma etcher)를 이용하여 각종 공정조건들에 따른 GaAs의 식각특성을 연구하였다. 공정변수들은 ICP 소스파워(0-500 W), RIE 척파워(0-150 W), 가스 종류($BCl_3$, $BCl_3$/Ar, $BCl_3$/Ne) 및 가스혼합비였다. $BCl_3$ 가스만을 이용하여 GaAs를 식

Keywords ICP;GaAs;Dry etching;