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Review
- KISE Journal of Korean Institute of Surface Engineering
- Volume 38(1); 2005
- Article
Review
KISE Journal of Korean Institute of Surface Engineering 2005;38(1):28-36. Published online: Nov, 30, -0001
The Effects of the Annealing on the Reflow Property of Cu Thin Film
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Department of Materials Science and Engineering, Kyonggi University;Department of Materials Engineering, Korea University of Technology and Education, Chungnam;
Abstract
In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal org
Keywords Reflow;Copper film;TaN Diffusion Barrier;Pattern filling;Giga DRAM;