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KISE Journal of Korean Institute of Surface Engineering 2005;38(1):44-48. Published online: Nov, 30, -0001
We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃~900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-
Keywords Nickel mono silicide;Gate silicide;Silicides;Color difference;NiSi/sub x/;