Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 38(4); 2005
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2005;38(4):174-178. Published online: Nov, 30, -0001

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Study on Growth of Nanocrystalline SiC Films Using TMS

  • Yang Jae-Woong;
    Dept. of Advanced Materials Science and Engineering, Daejin Univ.;
Abstract

Chemical vapor deposition technique has been used to grow epitaxial SiC thin films on Si wafers using tetramethylsilane(TMS) precursor. The films were observed to grow along (110) direction of 3C-SiC at $800^{circ}C$. The quality of the films w

Keywords Nanocrystalline film;Siiicon carbide;SiC;LPCVD;TMS;