Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 39(3); 2006
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2006;39(3):137-141. Published online: Nov, 30, -0001

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Infinite Selectivity Etching Process of Silicon Nitride to ArF PR Using Dual-frequency $CH_2F_2/H_2/Ar$ Capacitively Coupled Plasmas

  • Park, Chang-Ki;Lee, Chun-Hee;Kim, Hui-Tae;Lee, Nae-Eung;
    School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University;School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University;Sch
Abstract

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequen

Keywords Etch;Nitride;CCP;ArF PR;Dual frequency;