Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 41(1); 2008
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2008;41(1):1-5. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2008.41.1.001

Improvement of Electrical and Mechanical Characteristics of Organic Thin Film Transistor with Organic/Inorganic Laminated Gate Dielectric

  • Noh, H.Y.;Seol, Y.G.;Kim, S.I.;Lee, N.E.;
    School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University;School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University;Sch
Abstract

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate

Keywords Organic thin film transistor;Pentacene;Organic/inorganic laminated gate dielectric;Hafnium oxide [$HfO_2$];Flexible devices;