Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 41(1); 2008
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2008;41(1):12-15. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2008.41.1.012

Fabrication and Characterization of FET Device Using ZnO Nanowires

  • Kim, K.W.;Oh, W.S.;Jang, G.E.;Park, D.W.;Lee, J.O.;Kim, B.S.;
    Department of Advanced Materials Engineering, CBITRC, Chungbuk National University;Department of Advanced Materials Engineering, CBITRC, Chungbuk National University;Department of Advanced Materials Engineering, CBITRC, Chungbuk National University;Fusion
Abstract

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-

Keywords ZnO nanowire;FET;Thermal CVD;