Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 41(2); 2008
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2008;41(2):48-50. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2008.41.2.048

Solid Phase Crystallization Kinetics of Amorphous Silicon at High Temperatures

  • Hong, Won-Eui;Kim, Bo-Kyung;Ro, Jae-Sang;
    Department of Materials Science and Engineering, Hongik University;Department of Materials Science and Engineering, Hongik University;Department of Materials Science and Engineering, Hongik University;
Abstract

Solid phase crystallization (SPC) of amorphous silicon is usually conducted at around $600^{circ}C$ since it is used in the application of flat panel display using thermally susceptible glass substrate. In this study we conducted SPC experiment

Keywords Solid phase crystallization;Potycrystalline silicon;Kinetics;Nucleation;