Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 41(3); 2008
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2008;41(3):83-87. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2008.41.3.083

Etch Characteristics of TiN Thin Films in the Inductively Coupled Plasma System

  • Um, Doo-Seung;Kang, Chan-Min;Yang, Xue;Kim, Dong-Pyo;Kim, Chang-Il;
    School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engin
Abstract

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing rati

Keywords Etching;TiN;Plasma;ICP$BCl_3$;/Ar;