Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 41(4); 2008
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2008;41(4):142-146. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2008.41.4.142

Characterization of Ga, Al or In Doped ZnO Films Deposited by DC Magnetron Sputtering

  • Park, Sang-Eun;Park, Se-Hun;Jie, Lue;Song, Pung-Keun;
    Department of Materials Science and Engineering, Pusan National University;Department of Materials Science and Engineering, Pusan National University;Department of Materials Science and Engineering, Pusan National University;Department of Materials Scienc
Abstract

Trivalent ions(Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of $300^{circ}C$. We used the different three types of high density($95%{sim}$) ceramic sinte

Keywords TCO;AZO;GZO;ZIO;Magnetron sputtering;Zinc oxide;Ionic radius;