Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 41(5); 2008
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2008;41(5):189-193. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2008.41.5.189

The Etch Characteristics of TiN Thin Film Surface in the CH4 Plasma

  • Woo, Jong-Chang;Um, Doo-Seung;Kim, Gwan-Ha;Kim, Dong-Pyo;Kim, Chang-Il;
    School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engin
Abstract

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $27

Keywords Etch;TiN;Inductively Coupled Plasma;surface;