Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 42(4); 2009
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2009;42(4):169-172. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2009.42.4.169

Dry Etch Characteristics of TiN Thin Film for Metal Gate Electrode

  • Um, Doo-Seung;Woo, Jong-Chang;Park, Jung-Soo;Kim, Chang-Il;
    School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engin
Abstract

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/

Keywords Etching;TiN;Plasma;ICP;$Cl_2$/Ar;