Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 42(6); 2009
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2009;42(6):251-255. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2009.42.6.251

The Study of the Etch Characteristics of the TaN Thin Film Using an Inductively Coupled Plasma

  • Um, Doo-Seung;Kim, Seung-Han;Woo, Jong-Chang;Kim, Chang-Il;
    School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engin
Abstract

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of

Keywords Etch;TaN;Plasma;ICP;$BCl_3$/Ar;$O_2$;