Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 42(6); 2009
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2009;42(6):256-259. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2009.42.6.256

Temperature effect on Dry Etching of ZrO2 in Cl2/BCl3/Ar Plasma

  • Yang, Xue;Ha, Tae-Kyung;Wi, Jae-Hyung;Um, Doo-Seung;Kim, Chang-Il;
    School of Electrical and Electronics Engineering, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang University;Department of Renewable Energy, Chung-Ang University;School of Electrical and Electronics Engineering, Chung-Ang
Abstract

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this st

Keywords Etch;$ZrO_2$;Temperature;ICP;$Cl_2/BCl_3$/Ar;