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KISE Journal of Korean Institute of Surface Engineering 2014;47(1):20-24. Published online: Nov, 30, -0001
DOI : 10.5695/JKISE.2014.47.1.020
Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an i
Keywords Crystallization;Poly-Si;AMOLED;Joule heating;