Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 47(5); 2014
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2014;47(5):227-232. Published online: Nov, 30, -0001

PDF

DOI : 10.5695/JKISE.2014.47.5.227

Study of the Diffusion of Phosphorus Dependent on Temperatures for Selective Emitter Doping Process of Atmospheric Pressure Plasma

  • Kim, Sang Hun;Yun, Myoung Soo;Park, Jong In;Koo, Je Huan;Kim, In Tae;Choi, Eun Ha;Cho, Guangsup;Kwon, Gi-Chung;
    Kwangwoon University of Department of Electrical and Biological Physics;Kwangwoon University of Department of Electrical and Biological Physics;Kwangwoon University of Department of Electrical and Biological Physics;Kwangwoon University of Department of E
Abstract

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the

Keywords Atmospheric pressure plasma;Temperature;Phosphorus;Surface resistance;Charge density;Junction depth;IR(Infra-Red) image;