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Review
- KISE Journal of Korean Institute of Surface Engineering
- Volume 48(1); 2015
- Article
Review
KISE Journal of Korean Institute of Surface Engineering 2015;48(1):7-10. Published online: Nov, 30, -0001
DOI : 10.5695/JKISE.2015.48.1.007
The Study of Improvement in the Characteristics of Oxide Thin Film Transistor by using Atmospheric Pressure Plasma
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School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU);School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU);School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU);
Abstract
Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet
Keywords Plasma;Oxide TFT;IGZO;