Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 51(3); 2018
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2018;51(3):185-190. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2018.51.3.185

The Influence of the Wafer Resistivity for Dopant-Free Silicon Heterojunction Solar Cell

  • Kim, Sung Hae;Lee, Jung-Ho;
    Department of Materials and Chemical Engineering, Hanyang University;Department of Materials and Chemical Engineering, Hanyang University;
Abstract

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work f

Keywords dopant-free silicon heterojunction solar cell;wafer resistivity;inversion layer;solar cell characterization;work function;