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KISE Journal of Korean Institute of Surface Engineering 2020;53(3):124-129. Published online: Nov, 30, -0001
DOI : 10.5695/JKISE.2020.53.3.124
This study is for the development of high temperature ALD SiO2 film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbita
Keywords Space-Divided PEALD;Gap-Fill;Deposition;High aspect ratio;Inhibitor;