Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 55(5); 2022
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2022;55(5):247-260. Published online: Nov, 14, 2022

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DOI : 10.5695/JSSE.2022.55.5.247

Review on Atomic Layer Deposition of HfO2-based Ferroelectrics for Semiconductor Devices

  • Younghwan Leea,+, Taegyu Kwonb,+, Min Hyuk Parka,b*
    aResearch Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea bDepartment of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea
Abstract

Since the first report on ferroelectricity in Si-doped hafnia (HfO2), this emerging ferroelectrics have been considered promising for the next-generation semiconductor devices with their characteristic nonvolatile data storage. The robust ferroelectricity

Keywords semiconductor; ferroelectric; memory device; atomic layer deposition; vacuum technology.