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Review

  • The Korean Society of Surface Science and Engineering
  • Volume 56(2); 2023
  • Article

Review

The Korean Society of Surface Science and Engineering 2023;56(2):147-151. Published online: May, 2, 2023

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DOI : /10.5695/JSSE.2023.56.2.147

Enhancements of Crystallization and Opto-Electrical performance of ZnO/Ti/ZnO Thin Films

  • Jin-Kyu Janga,†, Yu-Sung Kimb,†, Yeon-Hak Leea, Jin-Young Choia,b, In-Sik Leeb, Dae-Wook Kimb, Byung-Chul Chab, Young-Min Konga, Daeil Kima,*
    aSchool of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea bAdvanced Forming Processes R&D Group, Korea Institute of Industrial Technology, Ulsan 44413, Republic of Korea
Abstract

Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10-11 Ω-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10-5 Ω-1.

Keywords ZnO; Ti; XRD; AFM; Figure of merit.