Dec, 28, 2023

Vol.56 No.6

Editorial Office


  • The Korean Society of Surface Science and Engineering
  • Volume 56(3); 2023
  • Article


The Korean Society of Surface Science and Engineering 2023;56(3):201-207. Published online: Jun, 27, 2023


Effects of deposition temperature on the properties of SnO2:Eu3+ thin films grown by radio-frequency magnetron sputtering

  • Shinho Cho*
    Department of Batteries Science and Engineering, Silla University, Busan 46958, Korea

Eu3+-doped SnO2 (SnO2:Eu3+) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO2 and Eu2Sn2O7. The 880 nmthick SnO2:Eu3+ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO2:Eu3+ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O2-–Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO2:Eu3+ thin films showed a main emission peak at 592 nm arising from the 5D07F1 transition and a weak 615 nm red band originating from the 5D07F2 transition of Eu3+. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500 – 1100 nm. These results indicate that the luminescent intensity of SnO2:Eu3+ thin films can be controlled by changing the deposition temperature.

Keywords Thin Film; Transmittance; Photoluminescence.