Oct, 31, 2024

Vol.57 No.5

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Review

  • The Korean Society of Surface Science and Engineering
  • Volume 57(1); 2024
  • Article

Review

The Korean Society of Surface Science and Engineering 2024;57(1):1-7. Published online: Feb, 28, 2024

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DOI : doi.org/10.5695/JSSE.2024.57.1.1

Study on the growth of boron-doped diamond films in relation to pretreatment processes

  • Mi Young Youa, Song Hyeon Leeb, Pung-Keun Songb,*
    aThe Institute of Materials Technology, Pusan National University, Busan 46241, Korea bDepartment of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
Abstract

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (Ra) remained similar to substrate Ra, but higher substrate Ra led to decreased crystallinity. Nb substrate with 0.83 μm Ra exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 μm Ra showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm-1 diamond peak in Raman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

Keywords Boron-doped diamond; HF-CVD; Sanding process; Seeding process; Potential window