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KISE Journal of Korean Institute of Surface Engineering 1990;23(4):218-224. Published online: Nov, 30, -0001
Silicon nitride thin(SiNx) is deposited onto 3 inch silicon wafor using ECR plasma apparatus. For the two different plasma extraction windows size, the thin films which were deposited by changing the SiH4/N2 gas fole at at 1.5mTorr without substrate heat
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