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KISE Journal of Korean Institute of Surface Engineering 1991;24(4):206-214. Published online: Nov, 30, -0001
In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2
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