Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 25(3); 1992
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1992;25(3):126-132. Published online: Nov, 30, -0001

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Fabrication of TaOx Thin Film on Si-Substrate by Photo-CVD Method

  • 한봉명;김수용;김경식;
    한국과학기술원 물리학과;한국과학기술원 물리학과;부산수산대학교 물리학과;
Abstract

Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. Thin TaOx film was formed from Ta(OCH3)5 by photo-CVD method at a low temperature. The result shows that the film obtained by photo-CVD method i

Keywords