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KISE Journal of Korean Institute of Surface Engineering 1992;25(5):271-281. Published online: Nov, 30, -0001
Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow
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