Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 25(5); 1992
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1992;25(5):271-281. Published online: Nov, 30, -0001

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Effects of Deposition Parameters on the Bonding Structure and Optical Properties of rf Sputtered a-Si$_{1-x}$C$_{x}$: H films

  • 한승전;권혁상;이혁모;
    한국과학기술원 재료공학과;한국과학기술원 재료공학과;한국과학기술원 재료공학과;
Abstract

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow

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