Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 25(6); 1992
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1992;25(6):287-292. Published online: Nov, 30, -0001

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On the silicon nitride film formation and characteristic study by chemical vapor deposition method using electron cyclotron resonance plasma

  • 김용진;김정형;송선규;장홍영;
    한국과학기술원 물리학과;한국과학기술원 물리학과;한국과학기술원 물리학과;한국과학기술원 물리학과;
Abstract

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating

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