Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 26(3); 1993
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1993;26(3):127-134. Published online: Nov, 30, -0001

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A Comparison of Electrical Properties by Recrystallization of Dopant-Implanted Amorphous Silicon Films

  • 이만형;최덕균;김정태;
    한양대학교 무기재료공학과;한양대학교 무기재료공학과;현대전자(주) 반도체연구소;
Abstract

P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to fi

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