Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 27(4); 1994
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1994;27(4):234-240. Published online: Nov, 30, -0001

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Annealing Characteristic of Phosphorus Implanted Silicon Films using an Ion Mass Doping Method

  • 강창용;최덕균;주승기;
    한양대학교 무기재료공학과;한양대학교 무기재료공학과;서울대학교 금속공학과;
Abstract

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(1

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