Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(2); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(2):93-99. Published online: Nov, 30, -0001

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The Effect of Substrate Bias Voltage during the Formation of BN film by R. F. Sputtering Method

  • 이은국;김도훈;
    연세대학교 공과대학 금속공학과;연세대학교 공과대학 금속공학과;
Abstract

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substr

Keywords