Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(5); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(5):325-329. Published online: Nov, 30, -0001

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MOVPE GROWTH OF HgCdTe EPILAYER WITH ARSENIC DOPING

  • Suh, Sang-Hee;Kim, Jin-Sang;Song, Jong-Hyeong;Kim, Je-Won;
    Korea Institute of Science and Technology;Korea Institute of Science and Technology;Korea University;Korea University;
Abstract

We report on p-type arsenic doping of metalorganic vapor phase epitaxially (MOVPE) grown HgCdTe on (100) GaAs. HgCdTe was grown at $370^{circ}C$ in a horizontal reactor with using dimethy-cadmium, diisoprophyltelluride, and elemental Hg. We use

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