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KISE Journal of Korean Institute of Surface Engineering 1996;29(5):399-406. Published online: Nov, 30, -0001
The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-or
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