Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(5); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(5):407-414. Published online: Nov, 30, -0001

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THIN FILM GROWTH AND SURFACE REACTION ON H-TERMINATED SILICON SURFACE

  • Yasuda, Yukio;Zaima, Shigeaki;
    Department of Crystalline Materials Science, School of Engineering, Nagoya University;Department of Crystalline Materials Science, School of Engineering, Nagoya University;
Abstract

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence

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