Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(5); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(5):467-473. Published online: Nov, 30, -0001

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USE OF SINGLE PRECURORS FOR THE PREP ARATION OF SILICON CARBIDE FILMS

  • Lee, Kyunf-Won;Yu, Kyu-Sang;Kim, Yun-Soo;
    Korea Research Institute of Chemical. Technology;Korea Research Institute of Chemical. Technology;Korea Research Institute of Chemical. Technology;
Abstract

Heteroepitaxial growth of cubic silicon carbide films on Si(001) and Si(111) substrates at temperatures 900-$1000^{circ}C$ has been achieved by high vacuum chemical vapor deposition using the single precursor 1, 3-disilabutane without carrying

Keywords