Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(5); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(5):570-576. Published online: Nov, 30, -0001

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PROPERTIES OF PIB-CU FILMS ACCELERATION VOLTAGE AND IONIZATION POTENTIAL

  • Kim, K.H.;Jang, H.G.;Han, S.;Choi, S.C.;Choi, D.J.;Jung, H.J.;Koh, S.K.;
    Div. of Ceramics, Korea Institute of Science and Technology;Div. of Ceramics, Korea Institute of Science and Technology;Div. of Ceramics, Korea Institute of Science and Technology;Div. of Ceramics, Korea Institute of Science and Technology;Dept. of Cerami
Abstract

Cu films for future ULSI metallization were prepared by partially ionized beam (PIB) deposition and characterized in terms of preferred orientation, grain size, roughness and resistivity. PIB-Cu films were prepared on Si (100) at pressure of $8 im

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