Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(6); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(6):760-765. Published online: Nov, 30, -0001

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LOW TEMPERATURE DEPOSITION OFSIOx FILMS BY PLASMA-ENHANCED CVD USING 100 kHz GENERATOR

  • Kakinoki, Nobuyuki;Suzuki, Takenobu;Takai, Osamu;
    Department of Materials Processing Engineering, Nagoya University;Department of Materials Processing Engineering, Nagoya University;Department of Materials Processing Engineering, Nagoya University;
Abstract

Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of

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