Oct, 31, 2024

Vol.57 No.5

Current Issue Archives
Search
Advanced Search
Editorial Office

Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(6); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(6):797-802. Published online: Nov, 30, -0001

PDF

DEPOSITION OF A-SIC:H FILMS ON AN UNHEATED SI SUBSTRATE BY LOW FREQUENCY (50Hz) PLASMA Cvd

  • Shimozuma, M.;Ibaragi, K.;Yoshion, M.;Date, H.;Yoshida, K.;Tagashira, H.;
    College of Medical Technology, Hokkaido University;Department of Electrical Engineering, Hokkaido University;Hokkaido Polytechnic College;Kitami Institute of Technology;Hokkaido Institute of Technology;Hokkaido Institute of Technology;
Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited on unheated substrates by low frequency (50Hz) plasma using $SiH_4+CH_4+H_2$ gas mixtures. Deposition rate, refractive index, optical band gap, Vickers hardness and IR s

Keywords