Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(6); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(6):816-823. Published online: Nov, 30, -0001

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CHARACTERISITCS OF CHLORINE IND DUCTIVELY COUPLED PLASMAS AND THEIR SILICON ETCH PROPERTIES

  • Lee, Young-Jun;Kim, Hyeon-Soo;Yeom, Geun-Young;Oho, Kyung-Hee;
    Department of Materials Engineering, Sung Kyun Kwan University;Department of Materials Engineering, Sung Kyun Kwan University;Department of Materials Engineering, Sung Kyun Kwan University;National Institute of Technology and Quality;
Abstract

Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled $Cl_2(O_2/N_2$) plasmas and their effects on the formation o

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