Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(6); 1996
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1996;29(6):876-879. Published online: Nov, 30, -0001

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DOPING EFFICIENCIES OF OXYGEN VACANCY AND SN DONOR FOR ITO AND InO THIN FILMS

  • Chihara, Koji;Honda, Shin-ichi;Watamori, Michio;Oura, Kenjiro;
    Department of Electric Engineering, Faculty of Engineering, Osaka University;Department of Electric Engineering, Faculty of Engineering, Osaka University;Department of Electric Engineering, Faculty of Engineering, Osaka University;Department of Electric E
Abstract

The effect of oxygen vacancy and Sn donor on carrier density for Indium Tin oxide (ITO) and Indium oxide (InO) films has been investigated. Hot-cathode Penning discharge sputtering (HC-PDS) in the mixed gasses of argon and oxygen was applied to fabricate

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