Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 30(2); 1997
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1997;30(2):111-120. Published online: Nov, 30, -0001

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A study of CuCl$_{x}$ growth mechanism and etching with Cl$_2$ plasma and PEt$_3$(Tri-ethyl phospine)

  • 박성언;김기범;
    서울대학교 재료공학과;서울대학교 재료공학부;
Abstract

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias wer

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