Oct, 31, 2024

Vol.57 No.5

Current Issue Archives
Search
Advanced Search
Editorial Office

Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 31(2); 1998
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1998;31(2):117-126. Published online: Nov, 30, -0001

PDF

A study on the formation and removal of residue and damaged layer on the overched silicon surface during the contact oxide etching using $C_4$F$_8$/H$_2$ helicon were plasmas

  • 김현수;이원정;백종태;염근영;
    성균관대학교 재료공학과;성균관대학교 재료공학과;한국전자통신연구소;성균관대학교 재료공학과;
Abstract

In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The

Keywords