Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 31(5); 1998
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1998;31(5):237-244. Published online: Nov, 30, -0001

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Effects of Post Annealing and Oxidation Processes on the Shallow Trench Etch Process

  • 이영준;황원순;김현수;이주옥;이정용;염근영;
    성균관대학교 재료공학과;성균관대학교 재료공학과;성균관대학교 재료공학과;한국과학기술원 재료공학과;한국과학기술원 재료공학과;성균관대학교 재료공학과;
Abstract

In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench s

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