Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(2); 1999
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1999;32(2):83-92. Published online: Nov, 30, -0001

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A study of the GaN etch properties using inductively coupled Cl$_2$-based plasmas

  • 김현수;이재원;김태일;염근영;
    성균관대학교 재료공학과;삼성종합기술원 광반도체연구실;삼성종합기술원 광반도체연구실;성균관대학교 재료공학과;
Abstract

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism wa

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