Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(2); 1999
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1999;32(2):93-99. Published online: Nov, 30, -0001

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Investigation of the residue formed on the silicon exposed to $C_4$F$_8$ helicon wave plasmas

  • 김현수;이원정;염근영;
    성균관대학교 재료공학과 반도체 공정 연구실;성균관대학교 재료공학과 반도체 공정 연구실;성균관대학교 재료공학과 반도체 공정 연구실;
Abstract

Surface polymer layer formed on the silicon wafer during the oxide overetching using $C_4F_8$/ helicon wave plasmas and their characteristics were investigated using spectroscopic elipsometry, X-ray photoelectron spectroscopy, and secondary ion

Keywords