Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(3); 1999
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1999;32(3):239-243. Published online: Nov, 30, -0001

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CHARACTERIZATION OF METALLIC CONTAMINATION OF SILICON WAFER SURFACES FOR 1G DRAM USING SYNCHROTRON ACCELERATOR

  • Kim, Heung-Rak;Kun-Kul, Ryoo;
    Research Institute of Industrial Science and Technology;Soonchunhyang University;
Abstract

At Present, 200mm wafer technology is being applied for commercial fabrications of 64, 128, and 256 M DRAM devices, and 300mm technology will be evolved for 1G DRAM devices in the early 21th century, recognizing limitations of several process technologies

Keywords Synchrotron;Total reflection;X-ray;Semiconductor;Cleaning;