Oct, 31, 2024

Vol.57 No.5

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(3); 1999
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1999;32(3):297-302. Published online: Nov, 30, -0001

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INFRARED ABSORPTION MEASUREMENT DURING LOW-TEMPERATURE PECVD OF SILICON-OXIDE FILMS

  • Inoue, Yasushi;Sugimura, Hiroyuki;Takai, Osamu;
    Department of Materials Processing Engineering, Nagoya University;Department of Materials Processing Engineering, Nagoya University;Department of Materials Processing Engineering, Nagoya University;
Abstract

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molec

Keywords in situ diagnostics;infrared spectroscopy;organosilicon compound;plasma-enhanced chemical vapor deposition;