Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(3); 1999
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 1999;32(3):389-392. Published online: Nov, 30, -0001

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VOID DEFECTS IN COBALT-DISILICIDE FOR LOGIC DEVICES

  • Song, Ohsung;Ahn, Youngsook;
    Department of Materials Science and Engineering, The University of Seoul;Department of Materials Science and Engineering, The University of Seoul;
Abstract

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer an

Keywords CoSi$_2$;surface damage;void defects;salicide;ion implantation;