Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 34(1); 2001
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2001;34(1):33-38. Published online: Nov, 30, -0001

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Direct Bonding of Si II 1.3$mu extrm{m}$-SiO$_2$/1.3$mu extrm{m}$-SiO$_2$ II SOI substrates prepared by FLA method

  • 송오성;이영민;이상현;이진우;강춘식;
    서울시립대학교 재료공학과;서울시립대학교 재료공학과;서울시립대학교 재료공학과;서울시립대학교 재료공학과;서울대학교 재료공학부;
Abstract

10cm-diameter Si(100)∥$1.3mu extrm{m}$-X$1.3_2$X$1.3mu extrm{m}$-$SiO_2$∥Si(100) afers were prepared using a fast linear annealing (FLA) equipment. 1.3$mu extrm{m}$-thick $SiO_2$ films were

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