Oct, 31, 2024

Vol.57 No.5

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Review

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 35(4); 2002
  • Article

Review

KISE Journal of Korean Institute of Surface Engineering 2002;35(4):211-217. Published online: Nov, 30, -0001

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Deposition Behaviors of Ti-Si-N Thin Films by RF Plasma-Enhanced Chemical Vapor Deposition.

  • 이응안;이윤복;김광호;
    부산대학교 재료공학부;부산대학교 재료공학부;부산대학교 재료공학부;
Abstract

Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and

Keywords RF-PECVD;TiSiN;nanocomposite;